Double Gate MOSFET Modeling Based on Adaptive Neuro-Fuzzy Inference System for Nanoscale Circuit Simulation

作者：Hayati Mohsen^*; Seifi Majid; Rezaei Abbas

来源：ETRI Journal, 2010, 32(4): 530-539.

DOI：10.4218/etrij.10.0109.0707

• Double gate MOSFET
• adaptive neuro-fuzzy inference system
• non-equilibrium Green's function
• nanoscale circuits

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, quantum mechanical effects are expected to become more and more important. Accurate quantum transport simulators are required to explore the essential device physics as a design aid. However, because of the complexity of the analysis, it has been necessary to simulate the quantum mechanical model with high speed and accuracy. In this paper, the modeling of double gate MOSFET based on an adaptive neuro-fuzzy inference system (ANFIS) is presented. The ANFIS model reduces the computational time while keeping the accuracy of physics-based models, like non-equilibrium Green's function formalism. Finally, we import the ANFIS model into the circuit simulator software as a subcircuit The results show that the compact model based on ANFIS is an efficient tool for the simulation of nanoscale circuits.

• 出版日期2010-8