Molecular beam epitaxy of Si/Ge nanoislands on stripe-patterned Si (001) substrates with different stripe orientations

作者：Matei D; Sanduijav B; Chen G; Hesser G; Springholz G^*

来源：Journal of Crystal Growth, 2009, 311(7): 2220-2223.

DOI：10.1016/j.jcrysgro.2008.12.004

• Nanostructures
• Scanning tunneling microscopy
• Molecular beam epitaxy
• Semiconducting silicon

Molecular beam epitaxy of Si and Ge on the stripe-patterned Si (0 0 1) substrates is studied by scanning tunneling microscopy. The stripe patterns consist of one-dimensional etch grooves oriented along different azimuth directions within the Si (0 0 1) surface. During Si buffer growth, the stripe morphology rapidly changes and the side walls of the grooves are transformed into differently inclined low-energy Si facets, depending on the stripe orientation and growth conditions. Subsequent Ge growth drastically changes the surface topography to form energetically favorable {1 0 5} sidewall facets. Depending on the sidewall geometry, Ge nanoislands formed at a coverage of around 5 monolayers nucleate either in the middle of the sidewalls or in the center of the grooves as a result of material accumulation induced by capillary forces and strain relaxation.

• 出版日期2009-3-15