MRAM PUF: A Novel Geometry Based Magnetic PUF With Integrated CMOS

作者：Das Jayita^*; Scott Kevin; Rajaram Srinath; Burgett Drew; Bhanja Sanjukta

来源：IEEE Transactions on Nanotechnology, 2015, 14(3): 436-443.

DOI：10.1109/TNANO.2015.2397951

• Easy axis
• energy
• geometric variations
• MRAM
• process variations
• PUF
• randomness

This manuscript addresses a novel MRAM-based physically unclonable PUF). The PUF responses are generated using the unique energy-tilt, which is an outcome of the random geometric variations in the MRAM cells. We have verified relevant attributes of this PUF through extensive magnetic simulations and in-house fabrication results. Our fabricated PUF cells generate entropy as high as 0.99, which is comparable to most of its competitors. To our knowledge, the footprint of the PUF cells is also lower than the majority of silicon PUFs. Also, the authentication control algorithm for this PUF requires very low additional control-steps. We conclude our discussion of this novel PUF with a study of authentication overhead and protocols required by the PUF system in terms of area, power, and delay.

• 出版日期2015-5