A model of the trapping media in microFLASH((R)) memory cells

作者：Avichail Bibi A^*; Fuks D; Kiv A; Maximova T; Roizin Y; Gutman M

来源：Journal of Materials Processing Technology, 2004, 153: 179-184.

DOI：10.1016/j.jmatprotec.2004.04.062

• molecular dynamics simulation
• computer model of dielectric
• carriers migration
• Coulomb correlation effects

A computer model for the dielectric trapping layer in the microFLASH(R) memory transistor is developed. Molecular dynamics method was used to design a cluster of atoms with dielectric properties and to perform computer simulation of the redistribution of the injected charges in the program/erase processes. The charge distributions obtained on the basis of proposed model are strongly influenced by Coulomb repulsion between the trapped charge carriers. This effect leads to non-Gaussian discrete space distribution of trapped charges and significantly influences the endurance of the memory device.

• 出版日期2004-11-10