Low Dark-Current Lateral Amorphous-Selenium Metal-Semiconductor-Metal Photodetector

作者：Abbaszadeh Shiva^*; Allec Nicholas; Wang Kai; Karim Karim S

来源：IEEE Electron Device Letters, 2011, 32(9): 1263-1265.

DOI：10.1109/LED.2011.2160327

• Amorphous selenium (a-Se)
• indirect conversion X-ray imaging
• metal-semiconductor-metal (MSM) photodetector

We report a lateral amorphous-selenium (a-Se) metal-semiconductor-metal detector with a blocking contact. The blocking contact, a polyimide layer, is shown to significantly reduce the dark current even at high applied biases that result in high photo-current-to-dark-current ratios, thus leading to wide dynamic range and high signal-to-noise ratio. The use of the polyimide blocking contact prevents the injection of both holes and electrons and improves considerably upon the high dark current of previously reported lateral a-Se detectors. The proposed detector demonstrates the feasibility of low-cost lateral a-Se devices for indirect conversion digital X-ray imaging applications such as chest radiography, fluoroscopy, and computed tomography.

• 出版日期2011-9