Weak antilocalization and zero-field electron spin splitting in AlxGa1-xN/AlN/GaN heterostructures with a polarization-induced two-dimensional electron gas

作者：Kurdak C^*; Biyikli N; Ozgur U; Morkoc H; Litvinov V I

来源：Physical Review B, 2006, 74(11): 113308.

DOI：10.1103/PhysRevB.74.113308

Spin-orbit coupling is studied using the quantum interference corrections to conductance in AlxGa1-xN/AlN/GaN two-dimensional electron systems where the carrier density is controlled by the persistent photoconductivity effect. All the samples studied exhibit a weak antilocalization feature with a spin-orbit field of around 1.8 mT. The zero-field electron spin splitting energies extracted from the weak antilocalization measurements are found to scale linearly with the Fermi wave vector (E-SS=2 alpha k(f)) with an effective linear spin-orbit coupling parameter alpha=5.5x10(-13) eV m. The spin-orbit times extracted from our measurements varied from 0.74 to 8.24 ps within the carrier density range of this experiment.

• 出版日期2006-9