Direct Identification of the Conducting Channels in a Functioning Memristive Device

作者：Strachan John Paul^*; Pickett Matthew D; Yang J Joshua; Aloni Shaul; Kilcoyne A L David; Medeiros Ribeiro Gilberto; Williams R Stanley

来源：Advanced Materials, 2010, 22(32): 3573-+.

DOI：10.1002/adma.201000186

Titanium dioxide memristive devices have been non-destructively characterized using X-ray absorption spectromicroscopy and TEM. These techniques allow direct identification of the chemistry and structure of the conducting channel responsible for the bipolar resistance switching seen in these devices. Within the TiO2 matrix, we observe the formation of a Ti4O7 Magneli phase possessing metallic properties and ordered planes of oxygen vacancies.

• 出版日期2010-8-24