A silicon nanocrystal tunnel field effect transistor

作者：Harvey Collard Patrick^*; Drouin Dominique; Pioro Ladriere Michel

来源：Applied Physics Letters, 2014, 104(19): 193505.

DOI：10.1063/1.4876765

In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very thin silicon dioxide and the channel in intrinsic polycrystalline silicon. The absence of doping eliminates the problem of achieving sharp doping profiles at the junctions, which has proven a challenge for large-scale integration and, in principle, allows scaling down the atomic level. The demonstrated ncFET features a 10(4) on/off current ratio at room temperature, a low 30 pA/mu m leakage current at a 0.5 V bias, an on-state current on a par with typical all-Si TFETs and bipolar operation with high symmetry. Quantum dot transport spectroscopy is used to assess the band structure and energy levels of the silicon island.

• 出版日期2014-5-12