Dynamic MAGFET model for sensor simulations

作者：Jankovic N D^*; Pesic T; Pantic D

来源：IET Circuits, Devices and Systems, 2007, 1(4): 270-274.

DOI：10.1049/iet-cds:20060310

A new model for a magnetic-sensitive split-drain MOSFET (MAGFET) consisting of only two n-channel MOS transistors (NMOSTs) in the equivalent sub-circuit is described. The model developed is based on the non-quasi-static MOST model of a conventional NMOST, modified to include the effects of the Lorentz force. On the basis of the results of three-dimensional numerical device simulations, it is shown that the new model can accurately predict the absolute and the relative MAGFET sensitivity for a wide range of the device biasing conditions. Unlike previous models, the new MAGFET model can also predict device dynamic response to time-varying magnetic fields more realistically.

• 出版日期2007-8