Unified theory of silicon carbide oxidation based on the Si and C emission model

作者：Goto Daisuke; Hijikata Yasuto

来源：Journal of Physics D: Applied Physics , 2016, 49(22): 225103.

DOI：10.1088/0022-3727/49/22/225103

• 4H-SiC
• oxidation
• diffusion
• interstitial
• Si and C emission model
• oxide-SiC interface

We have attempted to establish a unified theory of SiC oxidation by reproducing all the SiC oxide growth rates on the (0 0 0 1) Si-face, (1 1 (2) over bar 0) a-face and (0 0 0 (1) over bar) C-face at various oxidation temperatures and oxide partial pressures. Growth rates were calculated using the Si and C emission model and were confirmed to fully reproduce the observed data when an enhanced surface oxide growth rate was added to the previously defined growth rate. The parameters deduced from the calculations indicated that the activation energy for the initial interfacial reaction rate corresponds to the number of Si back-bond(s) on the crystalline surface. Although the C emission ratio was found to have no significant dependence on the surface orientation, the Si emission ratio varied significantly and so likely determines the oxide growth rate. The densities of Si and C interstitials at the SiC-oxide interface were simulated both on the oxide and SiC substrate sides, and the optimal oxidation sequence is discussed in terms of the formation of the interface state.

• 出版日期2016-6-8