Ambipolar charge transport in microcrystalline silicon thin-film transistors

作者：Knipp Dietmar^*; Chan Kah Yoong; Gordijn Aad; Marinkovic M; Stiebig Helmut

来源：Journal of Applied Physics, 2011, 109(2): 024504.

DOI：10.1063/1.3531990

Hydrogenated microcrystalline silicon (mu c-Si:H) is a promising candidate for thin-film transistors (TFTs) in large-area electronics due to high electron and hole charge carrier mobilities. We report on ambipolar TFTs based on mu c-Si: H prepared by plasma-enhanced chemical vapor deposition at temperatures compatible with flexible substrates. Electrons and holes are directly injected into the mu c-Si: H channel via chromium drain and source contacts. The TFTs exhibit electron and hole charge carrier mobilities of 30-50 cm(2)/V s and 10-15 cm(2)/V s, respectively. In this work, the electrical characteristics of the ambipolar mu c-Si: H TFTs are described by a simple analytical model that takes the ambipolar charge transport into account. The analytical expressions are used to model the transfer curves, the potential and the net surface charge along the channel of the TFTs. The electrical model provides insights into the electronic transport of ambipolar mu c-Si: H TFTs.

• 出版日期2011-1-15