BN, AlN, GaN, InN: Charge Neutrality Level, Surface, Interfaces, Doping

作者：Brudnyi V N^*

来源：Russian Physics Journal, 2017, 59(12): 2186-2190.

DOI：10.1007/s11182-017-1035-5

• BN
• AlN
• GaN
• InN
• intrinsic charge neutrality level
• defects
• surface
• interface
• doping with chemical impurities

On the basis of the charge neutrality concept, the analysis is fulfilled of the experimental data on the electron properties of the defective semiconductors after the radiation exposure, the electronic parameters of interfaces, surface work function and efficiency of doping with the impurities of high solubility in the nitrides of the group wz-III-N (BN, AlN, GaN, InN). The numerical evaluations of the charge neutrality levels in these compounds are presented.

• 出版日期2017-4