摘要

One of the key issues in the solar industry is lowering dopant concentration of emitter for high-efficiency crystalline solar cells. However, it is well known that a low surface concentration of dopants results in poor contact formation between the front Ag electrode and the n-layer of Si. In this paper, an evaporated Mg layer is used to reduce series resistance of c-Si solar cells. A layer of Mg metal is deposited on a lightly doped n-type Si emitter by evaporation. Ag electrode is screen printed to collect the generated electrons. Small work function difference between Mg and n-type silicon reduces the contact resistance. During a co-firing process, Mg is oxidized, and the oxidized layer serves as an antireflection layer. The measurement of an Ag/Mg/n-Si solar cell shows that V (oc), J (sc), FF, and efficiency are 602 mV, 36.9 mA/cm(2), 80.1%, and 17.75%, respectively. It can be applied to the manufacturing of low-cost, simple, and high-efficiency solar cells.

  • 出版日期2012-1-5