4H-SiC Trench IGBT With Back-Side n-p-n Collector for Low Turn-OFF Loss

作者：Liu, Yan-Juan; Wang, Ying^*; Hao, Yue; Yu, Cheng-Hao; Cao, Fei

来源：IEEE Transactions on Electron Devices, 2017, 64(2): 488-493.

DOI：10.1109/TED.2016.2639548

• Trench IGBT
• turn-OFF energy loss

In this paper, an n-p-n collector incorporated in the back side of a 4H-SiC trench IGBT is presented to reduce the turn-off energy loss. A comparative study between the proposed structure and the conventional structure is conducted through ATLAS. The simulation results have demonstrated that the turn-off energy loss is reduced by more than 82.96% with a slight degradation in the on-state voltage drop.

• 出版日期2017-2
• 单位杭州电子科技大学; 哈尔滨工程大学; 西安电子科技大学