科研之友
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摘要
We report on interfacial contributions to the anisotropic magnetoresistance (AMR) in Co layers sandwiched between Pt. Utilizing the Fuchs-Sondheimer formalism interface contributions can be separated from bulklike AMR. We demonstrate that for all-metal systems interfacial AMR is also present when varying the magnetization within the film plane. This interfacial in-plane AMR is two times smaller than the contribution that arises when the magnetization is varied within the plane perpendicular to the current direction. This finding is in contrast to the spin Hall MR found for ferromagnetic insulator/Pt bilayers revealing the existence of different MR effects at the interfaces of Pt with conducting and insulating ferromagnets.
- 出版日期2016-1-19
