摘要

Based on the inherent Ga vacancies in Ga2Te3, we use the preferential occupation of Cu in the Ga lattice, which can be confirmed by calculating the formation energy and Rietveld refinement, to disturb the vacancy path, and thereby have cleverly manipulated the vacancy plane. Moreover, we revealed that the sample annealed for 30 days has generated raindrop-shaped discontinuous vacancy planes, which can effectively reduce the lattice thermal conductivity (k(L)) and increase the bandgap (E-g), thus accounting for the remarkable improvement in thermoelectric performance. However, with the annealing time extending from 30 days to 95 days, there is a gradual enhancement in k(L) and limited improvement in the thermoelectric property, which is caused by the amalgamation or restructuring of the discontinuous vacancy planes.