AIGaN/GaN double-channel HEMT

作者：Quan Si Hao Yue Ma Xiaohua Zheng Pengtia Xie Yuanbin

来源：半导体学报, 2010, (04): 25-27.

• high-electron mobility transistor
• AlGaN/GaN/AlGaN/GaN
• double-channel

<正>The fabrication of AlGaN/GaN double-channel high electron mobility transistors on sapphire substrates is reported.Two carrier channels are formed in an AlGaN/GaN/AlGaN/GaN multilayer structure.The DC performance of the resulting double-channel HEMT shows a wider high transconductance region compared with single-channel HEMT. Simulations provide an explanation for the influence of the double-channel on the high transconductance region.The buffer trap is suggested to be related to the wide region of high transconductance.The RF characteristics are also studied.

• 出版日期2010-4-15
• 单位西安电子科技大学