Depth-resolved correlation between physical and electrical properties of stressed SiNx gate insulator films

作者：Park Jin Seong; Lee Chang Woo; Yoon Jae Jin; Chung Kwun Bum^*

来源：Journal of Electroceramics, 2011, 26(1-4): 63-67.

DOI：10.1007/s10832-010-9628-1

• SiN films
• Gate insulator
• Nano indentor
• Mechanical hardness
• Refractive index
• Depth profile

The physical and electrical properties of SiNx gate insulator films with compressive and tensile internal stress have been investigated using various characterization techniques. The mechanical hardness measured by nano-indenter system showed the different distribution in the film depth direction according to the type of film stress. The uniformity of optical property inside films had a correspondence to the mechanical properties of stressed SiNx films, as well. The contents and bonding states of hydrogen influenced the mechanical and optical properties of stressed SiNx films. The leakage characteristics of tensile SiNx films with uniform physical properties exhibited the lower current density than the compressive films with similar to 10(-7) A/cm(2) until 8 MV/cm. The correlation between physical and electrical properties depending on the internal stress will suggest the appropriate optimization of SiNx gate insulator films to enhance the device performance and reliability.

• 出版日期2011-6