Direct evidence for Sb as a Zn site impurity in ZnO

作者：Wahl U^*; Correia J G; Mendonca T; Decoster S

来源：Applied Physics Letters, 2009, 94(26): 261901.

DOI：10.1063/1.3159474

• antimony
• channelling
• II-VI semiconductors
• impurity states
• ion implantation
• wide band gap semiconductors
• zinc compounds

The lattice location of ion implanted antimony in zinc oxide has been determined by means of beta(-) emission channeling from the radioactive Sb-124 isotope. Following 30 keV implantation of Sb-124 into a single-crystalline ZnO sample to a fluence of 1x10(14) cm(-2), the angular-dependent emission rate of beta(-) particles around several crystallographic directions was measured with a position-sensitive Si detector. The majority of Sb was found to occupy Zn sites, with the possible fraction on O sites being at maximum 5%-6%.

• 出版日期2009-6-29