Analytical modeling of thermal noise in deep submicron MOSFETs

作者：Lu Zhi Qiang^*; Lai Feng Chang

来源：Analog Integrated Circuits and Signal Processing, 2009, 59(2): 185-189.

DOI：10.1007/s10470-008-9248-8

• Analytical modeling
• Thermal noise
• MOSFET noise
• Noise parameters

An analytical modeling of MOSFETs channel noise is proposed by considering short-channel effects of deep submicron MOSFETs, such as mobility degradation, hot carrier, bulk charge, and channel length modulation effect. The model is only dependent on bias, size, and technology of MOSFETs, and hence is suitable for low-noise RF IC design. Noise parameters of MOSFETs are achieved and good agreement between calculated and measured results is demonstrated.

• 出版日期2009-5
• 单位哈尔滨工业大学