A compact model for the ion implanted channel LDMOS transistor

作者：Shirvan Mahdi Ghasemi^*; Fathipour Morteza

来源：Solid State Sciences, 2012, 14(4): 471-475.

DOI：10.1016/j.solidstatesciences.2012.01.008

• LDMOS device
• Surface potential
• Ion implanted channel
• Depletion region

This paper presents a compact model for the lateral double-diffused MOS transistor in which ion implantation is employed in the channel region. We show that the conventional LDMOS device models which do not include specifics of the implanted channel region cannot accurately predict behavior of such structure. We then propose a new physics based model which employs surface potential in the device. The model gives a robust formulation for both the channel and the drift regions and can accurately describe the performance of the ion implanted channel LDMOS structure.

• 出版日期2012-4