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Analytical model for the surface potential and electrical field distribution of BPSOI devices
fang, Miao
Chen, Jun Nin
Ke, Dao Ming
Gao, Shan
International Conference on Computer as a Tool (EUROCON 2007), 2007-9-9 ~ 2007-9-12, pp 737-740, 2007
Summary
A 2-D analytical model for the surface potential and electrical field distribution along the drift region of buried partial silicon on insulator (BPSOI) is presented. Based on the solution of the 2-D Poisson's equation, the model gives the influence on the surface electrical field of the drain bias and structure parameters such as the length of the poly gate-field-plate, the length of the buried layer, and the substrate doping concentration. The analytical results are well supported by the simulation results obtained by Medici.
Keywords
BPSOI; surface potential; surface electrical field
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