Analytical model for the surface potential and electrical field distribution of BPSOI devices

作者：fang, Miao^*; Chen, Jun-Nin; Ke, Dao-Ming; Gao, Shan

来源：International Conference on Computer as a Tool (EUROCON 2007), Warsaw, POLAND, 2007-09-09 To 2007-09-12.

DOI：10.1109/EURCON.2007.4400348

• BPSOI
• surface potential
• surface electrical field

A 2-D analytical model for the surface potential and electrical field distribution along the drift region of buried partial silicon on insulator (BPSOI) is presented. Based on the solution of the 2-D Poisson's equation, the model gives the influence on the surface electrical field of the drain bias and structure parameters such as the length of the poly gate-field-plate, the length of the buried layer, and the substrate doping concentration. The analytical results are well supported by the simulation results obtained by Medici.

• 出版日期2007
• 单位安徽大学