Analysis of Temperature Dependent Effects on I-V Characteristics of Heterostructure Tunnel Field Effect Transistors

作者：Min Jie^*; Wang Lingquan; Wu Jianzhi; A**eck Peter M^*

来源：IEEE Journal of the Electron Devices Society, 2016, 4(6): 416-423.

DOI：10.1109/JEDS.2016.2614792

• Heterojunction tunnel FET
• temperature dependence

This paper provides an analysis of the intrinsic factors influencing the temperature dependence of the I-d-V-ds-V-gs characteristics of heterostructure Tunnel FETs based on GaSb/InAs tunneling junctions. The temperature dependence of energy bandgap, quantum confinement energy-shifts, and fermi-level position are quantified. There is significant cancellation among the various effects, such that the overall I-d-V-ds-V-gs characteristics are expected to have remarkably small temperature dependence, of the order of 10 - 20 mV shift in V-gs over the temperature range of 0 - 125 degrees C. Considerations are also discussed for representative extrinsic effects such as trap-assisted tunneling, which affect many experimental devices to a variable extent.

• 出版日期2016-11