Ultra-low power 1T-DRAM in FDSOI technology

作者：El Dirani H^*; Lee K H; Parihar M S; Lacord J; Martinie S; Barbe J Ch; Mescot X; Fonteneau P; Broquin J E; Ghibaudo G; Galy Ph; Gamiz F; Taur Y; Kim Y T; Cristoloveanu S; Bawedin M

来源：Microelectronic Engineering, 2017, 178: 245-249.

DOI：10.1016/j.mee.2017.05.047

• Fully Depleted Silicon-On-Insulator (FDSOI)
• Sharp switch
• Z(2)-FET
• Low-power
• Embedded memory
• 1T-DRAM

A systematic study of a capacitorless 1T-DRAM fabricated in 28 nm FDSOI technology is presented. The operation mechanism is based on band modulation. The Z(2)-FET memory cell features a large current sense margin and small OFF-state current at 25 degrees C and 85 degrees C. Moreover, low power consumption during state '1' writing is achieved with similar to 0.5 V programming voltage. These specifications make the Z(2)-FET an outstanding candidate for low-power eDRAM applications.

• 出版日期2017-6-25
• 单位中国地震局