Application of fluorine doped oxide (SiOF) spacers for improving reliability in low temperature polycrystalline thin film transistors

作者：Feng, Li Wei; Chang, Ting Chang^*; Liu, Po Tsun; Tu, Chun Hao; Wu, Yung Chun; Yang, Che Yu; Chang, Chun Yen

来源：Thin Solid Films, 2008, 517(3): 1204-1208.

DOI：10.1016/j.tsf.2008.04.106

• Fluorine doped oxide (SiOF)
• Poly-Si
• Thin film transistor (TFT)
• Lightly doped drain (LDD)
• Direct current (DC) stress

The novel process of self-aligned fluorine doped oxide (SiOF) spacers on low temperature poly-Si (LTPS) lightly doped drain (LDD) thin film transistors (TFTs) is proposed. A fluorine doped oxide spacers were provided to generate the lower dissociation Si-F bonds adjusted to the interface of the drain which is the largest lateral electric field region for lightly doped drain structure. The stronger Si-F bonds can reduce the bonds broken by impact ionization. It is found that the output characteristics of SiOF spacers TFTs show the superior immunity to kink effect. The degradations in Vth shifting, subthreshold slope, drain current and transconductance of SiOF spacers after DC stress are improved.

• 出版日期2008-12-1
• 单位清华大学; 中山大学