A high temperature superconductor latch

作者：Hu, CH^*; Jiang, JF; Cai, QY

来源：IEEE Transactions on Applied Superconductivity, 2003, 13(2): 1060-1062.

DOI：10.1109/TASC.2003.814150

• logic devices
• simulation
• superconducting devices
• tunnel effect

A latch based on High Temperature Superconductor Single-Hole Transistor (HTS-SHT) and High Temperature Superconductor-Normal Conductor-High Temperature Superconductor (HTS-SNS) junction is proposed in this paper. Firstly, we propose an improved HTS-SHT model based on three-state master equation method, which is comparable to Monte Carlo method in precision even in high voltage region of V-DD. Then, we present a theoretical analysis for this proposed latch, where HTS-SHT is described as this improved three-state model and HTS-SNS junction as a simplified model of Kummel-Nicolsky (KN) theory. In the proposed latch, HTS-SHT acts as a drive and HTS-SNS junction acts as a load, where we utilize the low-voltage-negative-differential-resistance (LVNDR) effect of HTS-SNS junction, and the clear Coulomb staircase of HTS-SHT having asymmetric junctions.

• 出版日期2003-6
• 单位上海交通大学