Direct Measurement of the Electrical Abruptness of a Nanowire p-n Junction

作者：Darbandi Ali; McNeil James C; Akhtari Zavareh Azadeh; Watkins Simon P; Kavanagh Karen L

来源：Nano Letters, 2016, 16(7): 3982-3988.

DOI：10.1021/acs.nanolett.6b00289

• Semiconductor nanowires
• GaAs
• off-axis electron holography
• secondary electron emission
• electrical characteristics
• current-voltage
• junctions
• built-in potential
• carrier profiles

Electrostatic potential maps of GaAs nanowire, p-n junctions have been measured via off-axis electron holography and compared to results from in situ electrical probing, and secondary electron emission microscopy using scanning electron microscopy. The built-in potential and depletion length of an axial junction was found to be 1.5 +/- 0.1 V and 74 +/- 9 run, respectively, to be compared with 1.53 V and 64 nm of an abrupt junction of the same end point carrier concentrations. Associated with the switch from Te to Zn dopant precursor was a reduction in GaAs nanowire diameter 3 +/- 1 nm that occurred prior to the junction center (n = p) and was followed by a rapid increase in Zn doping. The delay in Zn incorporation is attributed to the time required for Zn to equilibrate within the Au catalyst.

• 出版日期2016-7