Atomic Layer Deposition of Aluminum Oxide on Carboxylic Acid-Terminated Self-Assembled Monolayers

作者：Li Meng; Dai Min; Chabal Yves J^*

来源：Langmuir, 2009, 25(4): 1911-1914.

DOI：10.1021/la803581k

In situ infrared absorption spectroscopy is used to monitor atomic layer deposition (ALD) of aluminum oxide (Al(2)O(3)) on carboxylic acid-terminated self-assembled monolayers (SAMs), Si(III)-(CH2)10-COOH (or COOH-SAMs), directly grafted on silicon (111) at similar to 100 degrees C. The quality of resulting Al(2)O(3) films is comparable to Al(2)O(3) on SiO(2). Both the SAM film and the Si/SAM interface remain chemically stable during growth and upon post annealing to 400 degrees C, Suggesting that the tight packing of the alkyl chains and COOH-SAM head groups presents a diffusion barrier and promotes ordered nucleation for ALD.

• 出版日期2009-2-17