Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm(2) V-1 s(-1)

作者：Smith Jeremy; Bashir Aneeqa; Adamopoulos George; Anthony John E; Bradley Donal D C; Hamilton R; Heeney Martin; McCulloch Iain; Anthopoulos Thomas D^*

来源：Advanced Materials, 2010, 22(32): 3598-+.

DOI：10.1002/adma.201000195

An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated.

• 出版日期2010-8-24