An insulating-conductive transition driven by partial crystallization of amorphous Zn-Sn-O alloy

作者：Lee Ling^*; Kao Rie Hung; Yang Chu Shou^*; Ku Ching Shun; Lee Hsin Yi

来源：Journal of Alloys and Compounds, 2016, 672: 636-642.

DOI：10.1016/j.jallcom.2016.02.188

• Amorphous materials
• Semiconductors
• Electrical transport
• Crystal structure
• Electronic properties
• Synchrotron radiation

An insulating-conductive transition of Zn-Sn-O alloy is succeeded in this work driven by the partial crystallization out of the amorphous surrounding. The optimized room temperature mobility of 48 cm(2) V-1 s(-1) and surface roughness of 0.3 nm are achieved in a 125-nm-thick film with a Sn cation composition of 0.44. To our knowledge, the mobility is superior to typical values of transparent conductive oxides under the criterion of a surface roughness less than 1 nm. Moreover, a proper mechanism that an oxygen-deficient amorphous surrounding with a strong ns-orbital overlapping of cations induced by the partial crystallization is the origin of the insulating-conductive transition has been demonstrated through synchrotron radiation experiments. In brief, the mechanism revealed in this work could provide effective information for new potentialities of fabricating transparent electrodes.

• 出版日期2016-7-5