Stable indium oxide thin-film transistors with fast threshold voltage recovery

作者：Vygranenko Yuriy^*; Wang Kai; Nathan Arokia

来源：Applied Physics Letters, 2007, 91(26): 263508.

DOI：10.1063/1.2825422

Stable thin-film transistors (TFTs) with semiconducting indium oxide channel and silicon dioxide gate dielectric were fabricated by reactive ion beam assisted evaporation and plasma-enhanced chemical vapor deposition. The field-effect mobility is 3.3 cm(2)/V s, along with an on/off current ratio of 10(6), and subthreshold slope of 0.5 V/decade. When subject to long-term gate bias stress, the TFTs show fast recovery of the threshold voltage (V(T)) when relaxed without annealing, suggesting that charge trapping at the interface and/or in the bulk gate dielectric to be the dominant mechanism underlying V(T) instability. Device performance and stability make indium oxide TFTs promising for display applications.

• 出版日期2007-12-24