(100) GaAs/AlxGa1-xAs heterostructures for Zeeman spin splitting studies of hole quantum wires

作者：Trunov K^*; Reuter D; Ludwig A; Chen J C H; Klochan O; Micolich A P; Hamilton A R; Wieck A D

来源：Journal of Crystal Growth, 2011, 323(1): 48-51.

DOI：10.1016/j.jcrysgro.2010.11.060

• Conductance quantization
• Low dimensional hole systems
• Zeeman spin splitting
• Molecular beam epitaxy
• Semiconducting gallium arsenide
• Semiconductor-insulator-semiconductor field-effect transistor

We have developed undoped (1 0 0) GaAs/Al0.34Ga0.65As heterostructures, in which a 2D hole system is introduced by a heavily carbon doped field effect gate. We compare transport and mobility data from these (1 0 0) undoped devices with conventional Si modulation doped p-type devices grown on (3 1 1) substrates. Finally we present conductance quantization data for hole quantum wires made of these (1 0 0) heterostructures.

• 出版日期2011-5-15