A Simplified Behavioral MOSFET Model Based on Parameters Extraction for Circuit Simulations

作者：Turzynski Marek^*; Kulesza Wlodek J

来源：IEEE Transactions on Power Electronics, 2016, 31(4): 3096-3105.

DOI：10.1109/TPEL.2015.2445375

• Behavioral model
• capacitance-voltage characteristics
• circuit simulation
• MOSFETs
• parameter extraction
• semiconductor device modeling

This paper presents results on behavior modeling of a general purpose metal-oxide-semiconductor field-effect transistor (MOSFET) for simulation of power electronics systems requiring accuracy both in steady state and in switching conditions. Methods of parameters extraction, including nonlinearity of parasitic capacitances and steady-state characteristics, are based on manufacturer datasheet and externally measurable characteristics. The MOSFET template is written in the MAST language and simulated in the SABER simulator. Experimental validation of the N-channel power MOSFET-type IRFP240 (Fairchild Semiconductor) rated at 20 A/200 V is performed in a dc/dc boost converter. The main features of the developed model have been compared with the properties of an analytical MOSFET model and a general MOSFET model embedded to a SABER simulator.

• 出版日期2016-4