An 18 to 33 GHz Fully-Integrated Darlington Power Amplifier With Guanella-Type Transmission-Line Transformers in 0.18 mu m CMOS Technology

作者：Kuo Chin Wei^*; Chiou Hwann Kaeo; Chung Hua Yen

来源：IEEE Microwave and Wireless Components Letters, 2013, 23(12): 668-670.

DOI：10.1109/LMWC.2013.2284775

• CMOS power amplifier (PA)
• Darlington cell
• transmission-line transformer (TLT)

This letter presents an 18 to 33 GHz fully-integrated power amplifier (PA) in tsmc 0.18 mu m CMOS technology. The Darlington cell with cascode topology was adopted as the power cell to elevate the maximum available gain of the transistors in standard 0.18 mu m CMOS technology for being capable of operating at Ka band. Moreover, utilizing broadband and low-loss Guanella-type transmission-line transformers as the matching networks, the proposed PA exhibits a flat gain of 15.2 +/- 1 dB from 17.8 to 34.6 GHz, and 3 dB bandwidths from 17 to 35.2 GHz. The 3 dB power bandwidths are from 18 to 33 GHz with saturated output power of 19.5 dBm. The output 1 dB gain compression point (OP1 (dB)) of 16 dBm and power-added efficiency of 10.2% are achieved at 26 GHz under a power consumption of 711 mW. The chip dimension, including the pads, is 1.41 x 0.61mm(2).

• 出版日期2013-12
• 单位中央民族大学