Artificial Haldane gap material on a semiconductor chip

作者：Shim Yun Pil^*; Sharma Anand; Hsieh Chang Yu; Hawrylak Pawel

来源：Solid State Communications, 2010, 150(41-42): 2065-2068.

DOI：10.1016/j.ssc.2010.08.002

• Quantum dots
• Semiconductors
• Haldane gap

We show how nanostructuring of a metallic gate of a field-effect transistor (FET) converts the electron channel of an FET to an artificial Haldane chain with a gap in the energy spectrum. A specially designed gate structure creates a chain of triple quantum dot molecules. The electrons localized in the molecules realize a spin-half Heisenberg chain with spin-spin interactions alternating between ferromagnetic and antiferromagnetic. The quantum state of an FET is a semiconductor implementation of an integer spin-one antiferromagnetic Heisenberg chain with a unique correlated ground state and a finite energy gap, originally conjectured by Haldane.

• 出版日期2010-11