Multilaboratory comparison of traceable atomic force microscope measurements of a 70-nm grating pitch standard

作者:Dixson Ronald*; Chernoff Donald A; Wang Shihua; Vorburger Theodore V; Tan Siew Leng; Orji Ndubuisi G; Fu Joseph
来源:Journal of Micro/ Nanolithography, Mems, and Moems, 2011, 10(1): 013015.
DOI:10.1117/1.3549914

摘要

The National Institute of Standards and Technology (NIST), Advanced Surface Microscopy (ASM), and the National Metrology Centre (NMC) of the Agency for Science, Technology, and Research (A*STAR) in Singapore have completed a three-way interlaboratory comparison of traceable pitch measurements using atomic force microscopy (AFM). The specimen being used for this comparison is provided by ASM and consists of SiO2 lines having a 70-nm pitch patterned on a silicon substrate. For this comparison, NIST used its calibrated atomic force microscope (C-AFM), an AFM with incorporated displacement interferometry, to participate in this comparison. ASM used a commercially available AFM with an open-loop scanner, calibrated with a 144-nm pitch transfer standard. NMC/A*STAR used a large scanning range metrological atomic force microscope with He-Ne laser displacement interferometry incorporated. The three participants have independently established traceability to the SI (International System of Units) meter. The results obtained by the three organizations are in agreement within their expanded uncertainties and at the level of a few parts in 104.