Anomalous Hall effect in MnSi: Intrinsic to extrinsic crossover

作者：Glushkov V V^*; Lobanova I I; Ivanov V Yu; Demishev S V

来源：JETP Letters, 2015, 101(7): 459-464.

DOI：10.1134/S0021364015070085

Temperature dependences of low field Hall resistivity rho(H) are used to separate anomalous (rho (H) (a) ) and normal (R (H) B) contributions to the Hall effect in chiral magnet MnSi (T (c) a parts per thousand 29.1 K). It is found that the transition between paramagnetic (T > T (c) ) and magnetically ordered (T < T (c) ) phases is accompanied by the change in anomalous Hall resistivity from low temperature behavior governed by Berry phase effects (rho (H) (a) = mu(0) S (2)rho(2) M, T < T (c) ) to high temperature regime dominated by skew scattering (rho (H) (a) = mu(0) S (1)rho M, T > T (c) ). The crossover between the intrinsic (similar to rho(2)) and extrinsic (similar to rho) contributions to the anomalous Hall effect develops together with the noticeable increase in the concentration of charge carriers estimated from the normal Hall coefficient (from n/n (Mn)(T > T (c) ) a parts per thousand 0.94 to n/n (Mn)(T < T (c) ) a parts per thousand 1.5, n (Mn) a parts per thousand 4.2 x 10(22) cm(-3)). The observed features may correspond to the dramatic change in Fermi surface topology induced by the onset of long-range magnetic order in MnSi.

• 出版日期2015-4