Development of the Transparent Conductive Oxide Layer for Nanocrystalline Cubic Silicon Carbide/Silicon Heterojunction Solar Cells with Aluminum Oxide Passivation Layers

作者：Irikawa Junpei^*; Miyajima Shinsuke; Watahiki Tatsuro; Konagai Makoto

来源：Japanese Journal of Applied Physics, 2012, 51(2): 02BP04.

DOI：10.1143/JJAP.51.02BP04

We developed an In2O3: H/indium-tin oxide (ITO) stack as the front transparent conductive oxide (TCO) layer of nanocrystalline cubic silicon carbide/crystalline silicon heterojunction solar cells with Al2O3 passivation layers. We investigated the solar cell performance and optical and electrical properties of this layer with various annealing temperatures. The solar cells with In2O3: H and In2O3: H/ITO layers show a higher short circuit current density (J(so)) than that with an ITO layer owing to their lower surface reflection and lower free carrier absorption. The solar cell with the In2O3: H/ITO stack shows a higher fill factor (FF) than that with the In2O3: H layer. The solar cell with the In2O3: H/ITO stack shows an aperture area efficiency of 16.8% (V-oc = 0: 638 V, J(so) = 34: 5 mA/cm(2), and FF = 0: 762). These results indicate that the In2O3: H/ITO stack has good optical and electrical properties after annealing.

• 出版日期2012-2