All MgB2 Josephson Junctions with Amorphous Boron Barriers

作者：Mitamura Naoki^*; Maruyama Chikaze; Akaike Hiroyuki; Fujimaki Akira; Ishii Rintaro; Niihara Yoshihiro; Naito Michio

来源：IEICE - Transactions on Electronics, 2010, E93C(4): 468-472.

DOI：10.1587/transele.E93.C.468

• MgB2
• Josephson junction
• amorphous boron

All MgB2 Josephson Junctions with amorphous boron barriers have been fabricated on C-plane sapphire substrates by using a co-evaporation method The Junctions showed Josephson currents and the nonlinear current-voltage characteristics which seem to reflect the superconducting energy gap the critical current was observed when the thickness of the amorphous boron was in the range of 5 rim to 20 rim The critical current density was estimated to be 0 4 A/cm(2) to 450 A/cm(2) By observing he temperature dependence of the critical current we found that the junction had a critical temperature of 10 K and a normal layer in its barrier structure

• 出版日期2010-4