Alternative sources of p-type conduction in acceptor-doped ZnO

作者：Limpijumnong Sukit^*; Gordon Luke; Miao Maosheng; Janotti Anderson; Van de Walle Chris G

来源：Applied Physics Letters, 2010, 97(7): 072112.

DOI：10.1063/1.3481069

• Hall effect
• II-VI semiconductors
• phosphorus
• zinc compounds

We report first-principles calculations and interface simulations for Zn3P2, a compound that may form during doping of ZnO with phosphorous. While P is a deep acceptor in ZnO and thus unable to produce p-type conductivity, we show that hole accumulation can occur at ZnO/Zn3P2 interfaces due to the unusual valence-band alignment between the two materials. This provides an explanation for the hole conductivity that has been observed in Hall measurements on phosphorous-doped ZnO.

• 出版日期2010-8-16