A 0.45 V, Nano-Watt 0.033% Line Sensitivity MOSFET-Only Sub-Threshold Voltage Reference With no Amplifiers

作者：Zhu, Zhangming^*; Hu, Jin; Wang, Yutao

来源：IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2016, 63(9): 1370-1380.

DOI：10.1109/TCSI.2016.2576643

• Bulk-driven
• low line sensitivity
• low power
• low voltage
• sub-threshold
• voltage reference

An ultra-low voltage, low power, low line sensitivity MOSFET-only sub-threshold voltage reference with no amplifiers is presented. The low sensitivity is realized by the difference between two complementary currents and second-order compensation improves the temperature stability. The bulk-driven technique is used and most of the transistors work in the sub-threshold region, which allow a remarkable reduction in the minimum supply voltage and power consumption. Moreover, a trimming circuit is adopted to compensate the process-related reference voltage variation while the line sensitivity is not affected. The proposed voltage reference has been fabricated in the 0.18 mu m 1.8 V CMOS process. The measurement results show that the reference could operate on a 0.45 V supply voltage. For supply voltages ranging from 0.45 to 1.8 V the power consumption is 15.6 nW, and the average temperature coefficient is 59.4 ppm/degrees C across a temperature range of -40 to 85 degrees C and a mean line sensitivity of 0.033%. The power supply rejection ratio measured at 100 Hz is -50.3 dB. In addition, the chip area is 0.013 mm(2).

• 出版日期2016-9
• 单位西安电子科技大学