A low-power and high-gain fully integrated CMOS LNA

作者：Toofan S^*; Rahmati A R; Abrishamifar A; Lahiji G Rolentan

来源：Microelectronics Journal, 2007, 38(12): 1150-1155.

DOI：10.1016/j.mejo.2007.10.001

• LNA desiLm
• low noise amplifier
• low voltage design
• RF CMOS

In this paper, we present the design of a fully integrated CMOS low noise amplifier (LNA) with on-chip spiral inductors in 0.18 mu m CMOS technology for 2.4 GHz frequency range. Using cascode configuration, lower power consumption with higher voltage and power gain are achieved. In this configuration, we managed to have a good trade off among low noise, high gain, and stability. Using common-gate (CG) configuration, we reduced the parasitic effects of C-gd and therefore alleviated the stability and linearity of the amplifier. This configuration provides more reverse isolation that is also important in LNA design. The LNA presented here offers a good noise performance. Complete simulation analysis of the circuit results in center frequency of 2.4 GHz, with 37.6 dB voltage gain, 2.3 dB noise figure (NF), 50 Omega input impedance, 450 MHz 3 dB power bandwidth, 11.2 dB power gain (S-21), high reverse isolation (S-12) < -60 dB while dissipating 2.7 mW at 1. 8 V power supply.

• 出版日期2007-12