Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

作者：Ho, Szu Han^*; Chang, Ting Chang; Wu, Chi Wei; Lo, Wen Hung; Chen, Ching En; Tsai, Jyun Yu; Luo, Hung Ping; Tseng, Tseung Yuen; Cheng, O**ert; Huang, Cheng Tung; Sze, Simon M

来源：Applied Physics Letters, 2012, 101(5): 052105.

DOI：10.1063/1.4739525

This letter investigates a hump in gate current after dynamic negative bias stress (NBS) in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. By measuring gate current under initial through body floating and source/drain floating, it shows that hole current flows from source/drain. The fitting of gate current-gate voltage characteristic curve demonstrates that Frenkel-Poole mechanism dominates the conduction. Next, by fitting the gate current after dynamic NBS, in the order of Frenkel-Poole then tunneling, the Frenkel-Poole mechanism can be confirmed. These phenomena can be attributed to hole trapping in high-k bulk and the electric field formula Ehigh-k epsilon(high-k) = Q E-sio2 epsilon(sio2).

• 出版日期2012-7-30
• 单位中山大学