As doping of Si-based low-dimensional systems

作者：Ruffino F^*; Tomasello M V; Miritello M; Nicotra G; Spinella C; Grimaldi M G

来源：Applied Physics Letters, 2010, 96(9): 093116.

DOI：10.1063/1.3353987

• annealing
• arsenic
• grain boundaries
• ion implantation
• multilayers
• Rutherford backscattering
• semiconductor doping
• silicon compounds
• transmission electron microscopy

In this work we studied the As redistribution in SiO(2)(70 nm)/Si(30 nm)/SiO(2)(70 nm) multilayer during postimplantation annealing. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO(2) interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect could be qualitatively in agreement with a model that assumes a traps distribution into the Si in the first 2-3 nm above the SiO(2)/Si interfaces and along the Si grain boundaries. In particular, the traps concentration at the Si/SiO(2) interfaces was estimated in 10(14) traps/cm(2).

• 出版日期2010-3-1