科研之友
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摘要
A modified lateral-diffusion metal-oxide-semiconductor (MLDMOS) device with improved electrostatic discharge (ESD) protection performance is proposed for high-voltage ESD protection. In comparison with the traditional LDMOS and the LDMOS with an embedded silicon-controlled rectifier (LDMOS-SCR), the proposed device has better ESD robustness and higher holding voltage. By optimizing key parameters, such as the spacing between the drain and the poly gate, the effective channel length, and the number of fingers, the MLDMOS can achieve a maximum failure current over 80 mA/mu m, which is larger than that of LDMOS-SCR.
