A Compact 57-67 GHz Bidirectional LNAPA in 65-nm CMOS Technology

作者：Meng, Fanyi^*; Ma, Kaixue; Yeo, Kiat Seng; Boon, Chirn Chye; Yi, Xiang; Sun, Junyi; Feng, Guangyin; Xu, Shanshan

来源：IEEE Microwave and Wireless Components Letters, 2016, 26(8): 628-630.

DOI：10.1109/LMWC.2016.2585571

• Bidirectional amplifier
• CMOS
• low-noise amplifier (LNA)
• power amplifier (PA)
• T/R switches
• 60 GHz

The letter reports a 57-67 GHz bidirectional low-noise amplifier power amplifier (LNAPA) design. To eliminate the use of T/R switches, the bidirectional matching networks are introduced to connect LNA and PA core circuits in parallel and satisfy the isolation requirements with full consideration of input/output matching of the LNA and PA. Thus, the operation modes are simply selected by gate biasing of the LNA and PA core circuits. Fabricated in a commercial 65-nm CMOS technology, the Rx mode features peak gain of 21.5 dB with gain of > 17 dBover 57-67 GHz, NF of 6.7 dB with P-DC of 39.6 mW, while Tx mode achieves peak gain of 24.5 dB with gain of > 17 dB over 57-65 GHz, P-SAT of 8.4 dBm, PAE of 8.7% with PDC of 71.1 mW. The reverse isolation in both modes is better than 43 dB. The circuit occupies a compact size of 0.22 mm(2).

• 出版日期2016-8
• 单位电子科技大学; 南阳理工学院