A Dopant Cluster in a Highly Antimony Doped Silicon Crystal

作者：Kim Suhyun^*; Oshima Yoshifumi; Sawada Hidetaka; Hashikawa Naoto; Asayama Kyoichiro; Kaneyama Tosikatu; Kondo Yukihito; Tanishiro Yasumasa; Takayanagi Kunio

来源：Applied Physics Express, 2010, 3(8): 081301.

DOI：10.1143/APEX.3.081301

A dopant cluster consisting of two antimony atoms facing each other in a six-member ring was found in the silicon crystals of a dopant concentration of 5 x 10(20) cm(-3), slightly above the critical value for generating electrically deactivated clusters This cluster was detected with a 50-pm-resolution aberration corrected scanning transmission electron microscope A large angle convergent beam, 30 mrad in semi-angle, yields section images with an improved depth of field of about 2 nm The dopant clusters were discriminated

• 出版日期2010-8