Basic principles of STT-MRAM cell operation in memory arrays

作者：Khvalkovskiy, A. V.^*; Apalkov, D.; Watts, S.; Chepulskii, R.; Beach, R. S.; Ong, A.; Tang, X.; Driskill-Smith, A.; Butler, W. H.; Visscher, P. B.; Lottis, D.; Chen, E.; Nikitin, V.; Krounbi, M.

来源：Journal of Physics D: Applied Physics , 2013, 46(7): 074001.

DOI：10.1088/0022-3727/46/7/074001

• SPIN-TRANSFER-TORQUE
• MAGNETIC TUNNEL-JUNCTIONS
• ROOM-TEMPERATURE
• ATOMIC LAYERS
• MAGNETORESISTANCE
• MGO
• TIME
• ANISOTROPY
• PROSPECTS
• BARRIERS

For reliable operation, individual cells of an STT-MRAM memory array must meet specific requirements on their performance. In this work we review some of these requirements and discuss the fundamental physical principles of STT-MRAM operation, covering the range from device level to chip array performance, and methodology for its development.

• 出版日期2013-2-20