Analysis and Design of an X-Band-to-W-Band CMOS Active Multiplier With Improved Harmonic Rejection

作者：Mazor Nadav^*; Socher Eran

来源：IEEE Transactions on Microwave Theory and Techniques, 2013, 61(5): 1924-1933.

DOI：10.1109/TMTT.2013.2252914

• Amplifiers
• CMOS millimeter-wave (mm-wave) frequency multiplier
• conduction angle
• Ka-band
• local oscillator (LO)
• power amplifier (PA)
• transformers
• W-band
• X-band

Third-harmonic current generation in a CMOS transistor is modeled and analyzed including the effects of large-signal clipping and high-frequency roll-off for the application of millimeter-wave (mm-wave) frequency multipliers. Using the model and introducing harmonic rejection techniques, a wideband 8.5-dBm output-power x9 frequency multiplier from X-band to W-band implemented using a 65-nm CMOS process is designed and characterized. Six transformer coupled differential stages are used, two tripler stages, a Ka-band amplifier, and a three-stage W-band power amplifier (PA). The circuit reaches a saturated output power of 8.5 dBm at 91.8 GHz with a 12.2% bandwidth from 88 to 99.5 GHz. Excellent suppression of unwanted harmonics is achieved with better than 31 dBc across all bandwidth. The core design occupies only 390 mu m x 675 mu m and consumes 438 mW from a 1.2-/2.4-V supply.

• 出版日期2013-5