Double quantum-well tunnel junctions with high peak tunnel currents and low absorption for InP multi-junction solar cells

作者：Lumb Matthew P^*; Yakes Michael K; Gonzalez Maria; Vurgaftman Igor; Bailey Christopher G; Hoheisel Raymond; Walters Robert J

来源：Applied Physics Letters, 2012, 100(21): 213907.

DOI：10.1063/1.4722890

Lattice matched InAlGaAs tunnel junctions with a 1.18 eV bandgap have been grown for a triple-junction solar cell on InP. By including two InGaAs quantum wells in the structure, a peak tunnel current density of 113 A/cm(2) was observed, 45 times greater than the baseline bulk InAlGaAs tunnel junction. The differential resistance of the quantum well device is 7.52 x 10(-4) Omega cm(2), a 15-fold improvement over the baseline device. The transmission loss to the bottom cell is estimated to be approximately 1.7% and a network simulation demonstrates that quantum well tunnel junctions play a key role in improving performance at high sun-concentrations.

• 出版日期2012-5-21